Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component

ABSTRACT

A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Utility Patent Application claims priority to German PatentApplication No. DE 10 2004 039 208.0-33, filed on Aug. 12, 2004, whichis incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a method for producing a buried n-dopedsemiconductor zone in a semiconductor body.

BACKGROUND

Buried n-doped semiconductor zones are required as so-called bufferzones or field stop zones for example in vertical power components suchas power IGBT, power diodes, power thyristors or power MOSFET.Components having n-doped (field stop) zones that are buried, that is tosay arranged at a distance from a surface of a semiconductor body, aredescribed, for example, in DE 100 53 445 C2, DE 102 43 758 A1, EP 0 594049 A1 or DE 102 07 522 A1. The function and the advantages of fieldstop zones in power components are described, for example, inNiedernostheide, F. -J. et al.: “13 kV Rectifiers: Studies on Diodes andAsymmetric Thyristors”, Proceedings ISPSD 2003 (Cambridge, UK), pages122-125 or in DE 198 29 614 A1.

Buried field stop zones can be produced, for example, by means ofsufficiently known epitaxy methods for depositing doped semiconductorlayers successively on a semiconductor substrate the doping of whichlayers is chosen such that the desired doping profile is achieved in theresulting semiconductor body.

A further possibility for producing a buried n-doped semiconductor zoneconsists in producing the semiconductor zone as a doped zone of a firstsemiconductor body that is near the surface, which may be effected, forexample, by means of a diffusion method during which dopant atoms areindiffused into the semiconductor body. The doped semiconductor body issubsequently connected to a second semiconductor body at the doped side,which results in a semiconductor body having a buried dopedsemiconductor zone. So-called wafer bonding methods are suitable forconnecting the semiconductor bodies.

Both epitaxy methods and wafer bonding methods have the disadvantage ofbeing complicated and therefore expensive. The wafer bonding methodfurthermore has the disadvantage that the charge carrier life time inthe connected semiconductor body is significantly reduced in the regionof the interface between the two original semiconductor bodies, whichmay adversely affect the function, in particular the turn-off behavior,of a component having a buried zone produced in this way.

DE 102 43 758 A1 describes producing a buried field stop zone by meansof proton irradiation and a subsequent annealing step at temperatures ofbetween 250° C. and 500° C. By means of the proton irradiation, on theone hand, defects are produced in the semiconductor body and, on theother hand, hydrogen is thereby introduced into the semiconductor body,hydrogen-induced donors or hydrogen-correlated donors arising from thedefects and the hydrogen during the annealing step. The doping profilesproduced by such a method essentially follow the distribution of theprimary defects caused by the irradiation. The distribution has aGaussian profile in the irradiation direction, the half value width inthe case of proton irradiation being comparatively narrow, which resultsin a narrow doped zone in the case where only one irradiation energy isused.

SUMMARY

Embodiments of the present invention provide a method for producing asemiconductor and semiconductor component. In one embodiment, thepresent invention provides a method for producing a buried n-dopedsemiconductor zone in a semiconductor body. The method includesproducing an oxygen concentration at least in a region to be doped inthe semiconductor body. The semiconductor body via one side withnondoping particles for producing defects in the region to be doped. Athermal process on the semiconductor body.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention and are incorporated in andconstitute a part of this specification. The drawings illustrate theembodiments of the present invention and together with the descriptionserve to explain the principles of the invention. Other embodiments ofthe present invention and many of the intended advantages of the presentinvention will be readily appreciated as they become better understoodby reference to the following detailed description. The elements of thedrawings are not necessarily to scale relative to each other. Likereference numerals designate corresponding similar parts.

FIG. 1 illustrates a first exemplary embodiment of a method according tothe invention for producing a buried n-doped semiconductor zone.

FIG. 2 illustrates a second exemplary embodiment of the method accordingto the invention during individual method steps.

FIG. 3 illustrates, in side view in cross section, a power IGBT with ann-doped semiconductor zone produced by a method according to theinvention.

FIG. 4 illustrates a doping profile in an n-doped zone producedaccording to the invention in comparison with a zone produced by meansof proton irradiation. The doping concentration is plotted against thedepth of the semiconductor body proceeding from the irradiated side.

FIG. 5 illustrates the doping profile for a modification of a methodaccording to the invention, in which an electron irradiation is effectedbesides an irradiation with nondoping particles.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments of the present invention can be positioned ina number of different orientations, the directional terminology is usedfor purposes of illustration and is in no way limiting. It is to beunderstood that other embodiments may be utilized and structural orlogical changes may be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims.

The present invention provides a method for producing a buried n-dopedsemiconductor zone which enables in particular the production of widerdoped zones.

In one embodiment, the method according to the invention for producing aburied n-doped semiconductor zone in a semiconductor body includesproducing an oxygen concentration at least in the region to be doped inthe semiconductor body, irradiating the semiconductor body via one sidewith nondoping particles for producing defects in the region to bedoped, and carrying out a thermal step at temperatures of between 380°and 500°.

The particles used for the irradiation of the semiconductor body arepreferably ions of more than monovalant elements, such as helium ions orcarbon ions for example. Furthermore, semiconductor ions, such assilicon ions, for example, when using a silicon semiconductor body, aresuitable.

In one embodiment of the method according to the invention, the defectsproduced by the irradiation are converted by a subsequent thermalprocess, so-called thermal double donors (TDDs) arising which include adefect nucleus and oxygen atoms attached to the defect nucleus. Thedonor profile formed is influenced by the primary defect profile, thatis to say the profile of the primary defects established by theirradiation. The distribution profile of the donors in the semiconductorbody corresponds to a profile broadened in comparison with thedistribution profile of the primary defects if the oxygen concentrationin the region of the primary defects may be assumed at leastapproximately to be uniformly distributed, i.e. does not fluctuate to anexcessively great extent spatially in the region of the primary defects.The location of the maximum of the defect distribution proceeding fromthe radiation side or the distance between the location of this maximumand the irradiation side is dependent on the irradiation energy and thetype of nondoping particles used.

The physical constitution of TDDs is described in C. A. J. AmmerleanEMIS Datareview Series No. 20 (1999), pp. 663-668.

The oxygen concentration in the semiconductor body that is required forforming the thermal double donors is set prior to the irradiation withnondoping particles, for example, by means of an oxidation step duringwhich the semiconductor body is heated in an oxygen atmosphere. In theproduction of power components, such as power diodes, power IGBTs orpower thyristors, for example, one of the first processes of theproduction method is usually such an oxidation process so that thesemiconductor bodies used for producing power components have asufficient oxygen concentration anyway, lying in the region of a few10¹⁶ cm⁻³.

In comparison with a known method, in which a buried n-dopedsemiconductor zone is produced by means of a proton implantation and asubsequent annealing step, the implantation of more than monovalent ionsmakes it possible to significantly increase the width of the region withhigh defect frequency and thus the width of the resultant region of highn-type doping. The gradient with which the doping concentration of then-doped region produced by the method falls in the direction of suchregions which are not doped by the method furthermore decreases.Simulations show that the turn-off behavior of power components, forexample of power diodes, can be significantly improved if the componentshave a field stop zone with a doping profile in the vertical directionwith respect to the surface with such a small gradient in the directionof the component interior. In the case of one method according to theinvention, the semiconductor body can be irradiated over the whole areavia the one side, which results in an n-doped semiconductor zone whichis arranged at a distance from the one side in a vertical direction ofthe semiconductor body and which extends completely through thesemiconductor body in a lateral direction.

The irradiation of the semiconductor body with the nondoping particlesmay additionally also be carried out in masked fashion using a mask,which results in buried n-doped sections whose dimensions in the lateraldirection are essentially determined by the mask used during theirradiation.

Furthermore, there is the possibility, by means of the irradiation andthe subsequent thermal step of obtaining a broadened doping profile ofthe TDDs by applying a continuous metallization layer, for example, madeof aluminum, to the irradiation side, through which layer theirradiation is effected. The irradiation energy has to be increased inthis case compared with irradiation without such a layer, in order toobtain the location of the maximum at a predetermined position.

The method explained up to now assumes that the oxygen concentration inthe region in which primary defects are products is at leastapproximately constant. Such uniform distribution of the oxygen can beachieved by means of oxidation steps of corresponding length, and ispresent in particular in the region near the surface, that is to say theregion in which field stop zones are usually produced in powercomponents. In this method, the non-constant doping profile of thedouble donors is obtained by the production of primary defects that arenot distributed uniformly.

A further embodiment provides for the doping profile of the doubledonors produced to be predetermined by a non-constant oxygenconcentration profile. Such an oxygen profile can be set by suitablecontrol of an oxidation process by which oxygen is indiffused into thesemiconductor body, the diffusion temperature chosen during thediffusion operation and the diffusion duration determining theconcentration profile of the indiffusing oxygen atoms. Primary defectsare produced by means of an electron irradiation, for example, in thismethod. Such an electron irradiation leads, in a defect regionpredetermined by the irradiation energy, to an essentially homogeneousdefect distribution in the vertical direction with respect to the wafersurface if the acceleration energy of the electrons is chosen to besufficiently high. The irradiation is followed by a thermal step attemperatures of between 380° C. and 500° C., by means of which doubledonors are formed from the defects and the oxygen, the donorconcentration essentially following the oxygen concentration. By meansof such a method, it is possible to produce n-doped regions with a veryshallow gradient of the doping profile.

Such a method for producing a doping profile with a shallow gradient isadvantageously combined with an irradiation with nondoping, more thanmonovalent particles. The electron irradiation leads to a wider defectregion with a lower maximum defect distribution, which gives rise intotal, after the annealing step, to an n-doped zone having a sectionhaving a high doping concentration and a slow decrease in the dopingconcentration in the direction of regions not doped by the method.

FIG. 1 a illustrates, in side view in cross section, one embodiment of asemiconductor body 100 during a first process of the method according tothe invention, in which one side 101 of the semiconductor body 100 isirradiated with nondoping particles in order to implant these nondopingparticles into the semiconductor body 100. In this embodiment, theirradiation side 101 is the front or rear side of the semiconductor bodyor semiconductor chip 100 depending on the intended use of the dopedzone produced by the method.

The particles implanted into the semiconductor body 100 cause primarydefects in the semiconductor body 100, the distribution of the primarydefects in the irradiation direction, designated as the x direction inthe figures, approximately following a Gaussian distribution. In thisembodiment, the position of the maximum of the primary defectdistribution or the distance between the maximum and the irradiationside 101 is dependent on the irradiation or implantation energy and thetype of particles implanted. The implanted particles are preferably morethan monovalent particles, such as helium ions, carbon ions or siliconions, for example. The implantation energy is chosen depending on thedesired implantation depth, which may be up to a few hundred μm in thecase of components having a relatively high blocking capability. Theimplantation energies for helium for this purpose lie for example in therange between 0.15 MeV and 20 MeV.

A semiconductor region which is arranged at a distance from theirradiation side 101 and in which the maximum of the primary defects islocated is designated by 20 in FIG. 1 a.

The irradiation or implantation process is followed, in one embodimentof the method according to the invention, by an annealing step duringwhich the semiconductor body is heated to temperatures of between 380°C. and 500° C., preferably between 420° C. and 460° C., for apredetermined duration. The duration of the annealing step lies between20 minutes and 10 hours, preferably between 20 minutes and 2 hours.

In one embodiment, the method according to the invention presupposesthat a predetermined oxygen concentration is present in the irradiatedsemiconductor body 100, which oxygen concentration lies for instance inthe region of 10¹⁶ cm⁻³ or above and is set for example by means of anoxidation step prior to irradiation of the semiconductor body 100. Thesemiconductor body preferably includes a so-called float zonesemiconductor material, like float zone silicon. Such float zonesemiconductor material is free from crucible contamination and thereforeis almost free of oxygen. The oxygen concentration required forperforming the method as described above is therefore set by suitableprocess like an oxidation process.

During the annealing process, thermal double donors are formed in thesemiconductor body 100; the thermal double donors include the defectsresulting from the irradiation and the oxygen atoms present and have ann-doping effect. In this embodiment, the distribution of the thermaldouble donors in the semiconductor body, and thus the profile of thedoping concentration, follows the primary defect distribution resultingfrom the irradiation. The n-doped region which is present at a distancefrom the irradiation side 101 after the annealing in the semiconductorbody 100 is designated by the reference symbol 21 in FIG. 1.

In the exemplary embodiment in accordance with FIG. 1, the semiconductorbody 100 is irradiated over the whole area via the irradiation side 101,which results, after the annealing process, in an n-doped semiconductorzone 21 which is arranged at a distance from the irradiation side 101and extends over the entire semiconductor body 100 in the lateraldirection.

FIG. 2 illustrates a further exemplary embodiment of a method accordingto the invention, in which the irradiation side 101 is irradiated inmasked fashion using a mask 200 having cutouts 201. The mask 200protects predetermined sections of the semiconductor body 100 fromirradiation, which gives rise, in the semiconductor body 100, to defectregions 20′ only beneath the cutouts 201 of the mask 200. After theannealing process, the semiconductor body 100 contains a plurality ofn-doped sections 21 which are arranged at a distance from one another inthe lateral direction and whose distance from the irradiation side 101is dependent, in the manner already explained, on the irradiation energyand the type of the particles used and whose spacing in the lateraldirection of the semiconductor body 100 is dependent on the mask 200used for the irradiation.

The mask 200 used for the irradiation is a metal mask, for example,which is either introduced at a distance from the surface of thesemiconductor body 100 into the beam path between the irradiation source(not illustrated) and the semiconductor body 100, as is illustrated inFIG. 2 a, but which may also be deposited directly onto the surface ofthe semiconductor body in order to be removed again after theirradiation process.

The method according to the invention is suitable, in particular, forproducing n-doped field stop zones in power components such as powerdiodes, power IGBTs or power thyristors, for example.

FIG. 3 illustrates, in side view in cross section, a power IGBT havingsuch an n-doped field stop zone. The initial basis for this power IGBTis formed by a weakly n-doped semiconductor body 100, in which a buriedn-doped semiconductor zone is produced as field stop zone by means ofthe method according to the invention. In the component, the field stopzone 21 adjoins the p-type emitter 31 of the component, which emitter isformed in the region of a rear side of the semiconductor body 100. Theirradiation of the semiconductor body with n-doping particles forproducing the field stop zone 21 is effected, for the componentillustrated, preferably via that side of the semiconductor body whichforms the later rear side 101 of the component. The production of thep-type emitter 31 in the rear side region is effected for example bymeans of an implantation method via the rear side 101 and a subsequentannealing process. If the production of the p-type emitter is effectedat temperatures greater than 500° C., then the production of the p-typeemitter is effected before the method for producing the buried zone 21,since lower temperatures are required for this. It generally holds truethat the process for producing this semiconductor zone 21 is to beincorporated into the overall process for producing the component suchthat processes having high temperatures than are required for producingthe semiconductor zone 21 are carried out beforehand, and that processeshaving temperatures lower than are required for producing thesemiconductor zone 21 are carried out afterward. The annealing processrequired for producing the thermal double donors (TDDs) may also becombined with other processes, for example, the heat treatment ofcontact layers.

A cell array having p-doped body zones or p-type base zones 41, n-dopedn-type emitter zones 42 and a gate electrode 43 is present in asufficiently known manner in the region of the front side 102 of thesemiconductor body. In this embodiment, the gate electrode 43 isarranged in a manner insulated from the semiconductor body 100 andextends adjacent to channel zones arranged in the body zones 41 betweenthe n-type emitter zones 42 and such sections 45 of the semiconductorbody 100 which have the basic doping. The section 45 of thesemiconductor body which is present between the field stop zone 21 andthe body zones 41 and has the basic doping forms the drift zone or then-type face of the IGBT.

FIG. 4 illustrates, in a first curve I, the doping profile of an n-dopedsemiconductor zone produced by means of the method according to theinvention in a silicon semiconductor body. In FIG. 4, the dopingconcentration of the semiconductor zone is plotted against theirradiation direction (x direction), the numerical values specified onthe x axis designating the distance from the surface of thesemiconductor body at the irradiation side. The doping concentration wasdetermined by means of CV measurements (CV=capacitance-voltage) for thecurve in FIG. 4.

The production of the n-doped semiconductor zone in the semiconductorbody on which the measurement was based was effected by implantation ofhelium ions with an energy of 5.4 MeV and a dose of 7·10¹⁰ cm⁻² and asubsequent annealing step at 430° C. and with a duration of 60 minutes.The oxygen concentration in the semiconductor body was approximately10¹⁶ cm⁻³.

In the example, the doping maximum is approximately 2.5·10¹⁴ cm⁻³ andthe half value width of the doping distribution is approximately 5.3 μm.The half value width is, in a known manner, the distance between the twolocations at which the doping concentration is still 50% of the maximumconcentration.

For comparison, the doping profile for an n-doped semiconductor zoneproduced by proton irradiation and subsequent annealing is illustratedas curve II in FIG. 4. The irradiation parameters for the protonirradiation were chosen to produce a corresponding maximum dopingconcentration (peak concentration) of approximately 2.5·10¹⁴ cm⁻³. Inthis case, the irradiation energy for the protons was 1.5 MeV given anirradiation dose of 10¹³ cm⁻² and the annealing was effected at atemperature of 420° C. and with a duration of 30 minutes.

As can be gathered from the doping profile in curve II, the doped regionresulting from the proton implantation has a substantially smaller halfvalue width of only approximately 3.6 μm. Furthermore, in the case ofthe n-doped semiconductor zone produced by one embodiment of the methodaccording to the invention, the gradient with which the dopingconcentration falls proceeding from the peak concentration issignificantly smaller than in the case of the n-doped semiconductor zoneproduced by proton implantation. A small gradient of the profile of thedoping concentration, i.e., a more weakly decreasing doping proceedingfrom the location of the peak concentration in the direction of thatside of the semiconductor body which is remote from the irradiation sideor proceeding from the location of the peak concentration further intothe semiconductor body, is advantageous particularly when the n-dopedsemiconductor zone produced according to the invention is used as afield stop zone in power components, since a small gradient in thisregion of the doping profile has a positive effect on the turn-offbehavior of the components.

The half value width in the case of the semiconductor zone 21, 21′ withthermal double donors produced according to one embodiment of the methodaccording to the invention increases with the range—controlled by way ofthe energy—or the penetration depth of the irradiation. The dopingprofile can be shifted nearer toward the surface by performing theirradiation through a metal layer or metal foil. By way of example, whena silicon semiconductor body is irradiated with helium nuclei having anenergy of 5.4 MeV, the maximum of the doping is present at a penetrationdepth of 27 μm, and the half value width is between 4 μm and 7 μm. Byway of example, in the case of irradiation through an aluminum layerhaving a thickness of 7 μm, the peak value of the doping concentrationis 20 μm. In the case of irradiation through an even thicker layer, thepeak value can be positioned nearer to the surface without the halfvalue width and the associated shallow gradient changing.

It is likewise possible in this way to increase the half value widthgiven a fixed depth of the doping maximum since, as the thickness of thelayer through which radiation additionally passes increases theimplantation energy has to be increased in order to obtain the samepenetration depth, as a result of which the half value width increases.

The profile of the doping concentration proceeding from the peakconcentration can be flattened even further. For this purpose, firstly ashallow oxygen profile is produced in the semiconductor body, i.e., theoxygen concentration is set such that it decreases with a small gradientproceeding from the surface. Such a region can be produced for exampleby indiffusion of oxygen into the semiconductor body. The semiconductorbody is subsequently irradiated with electrons, thereby giving rise todefects distributed essentially homogeneously. The irradiation with thenondoping, more than monovalent particles is effected in addition to theelectron irradiation. The irradiation steps may be followed by a commonannealing step at temperatures of between 380° C. and 500° C., as aresult of which recombination centers are essentially illuminated andthermal double donors are formed in the regions in which oxygen ispresent. The doping profile formed upon application of such a method isillustrated in FIG. 5. This doping profile follows, in the shallowregion, the concentration of the oxygen incorporation into thesemiconductor body, the doping concentration being lower than the oxygenconcentration.

The higher donor concentration in the region irradiated by the nondopingparticles results from the higher defect density present there.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

1. A method for producing a buried n-doped semiconductor zone in asemiconductor body comprising: producing an oxygen concentration atleast in a region to be doped in the semiconductor body; irradiating thesemiconductor body via one side with nondoping particles for producingdefects in the region to be doped; and carrying out a thermal process onthe semiconductor body.
 2. The method of claim 1, wherein the thermalprocess is carried out at temperatures of between 380° C. and 500° C. 3.The method of claim 2, wherein the thermal process is carried out attemperatures of between 420° C. and 460° C.
 4. The method of claim 1,comprising: producing the oxygen concentration by heating thesemiconductor body in an oxygen atmosphere.
 5. The method of claim 1,comprising: defining the oxygen concentration to be between 5·10¹⁵ cm⁻³and 5·10¹⁷ cm⁻³.
 6. The method of claim 1, comprising: defining thenondoping particles to be at least one of a group consisting of heliumions, carbon ions or ions of a semiconductor material.
 7. The method ofclaim 1, comprising: defining the semiconductor body to be made ofsilicon.
 8. The method of claim 1, comprising defining the irradiationdose of the nondoping particles to be between 10⁹ cm⁻² and 10¹³ cm^(−2.)9. The method of claim 1, comprising defining a duration of the thermalprocess to be between 20 minutes and 10 hours.
 10. The method of claim9, comprising wherein the duration of the thermal process is between 20minutes and 2 hours.
 11. The method of claim 1, comprising whereinirradiating the semiconductor body is effected in masked fashion using amask.
 12. The method of claim 1, comprising defining the distribution ofthe oxygen concentration in the region to be doped is at leastapproximately homogeneous.
 13. A method for producing a buried n-dopedsemiconductor zone in a semiconductor body comprising: producing anoxygen concentration at least in a region to be doped in thesemiconductor body; irradiating the semiconductor body via one side withnondoping particles for producing defects in the region to be doped;irradiating the semiconductor body via one side with electrons; andcarrying out a thermal process on the semiconductor body.
 14. The methodas claimed in claim 13, comprising defining the distribution of theoxygen concentration in the region to be doped is inhomogeneous anddecreases proceeding from the one side.
 15. A method for producing aburied n-doped semiconductor zone in a semiconductor body comprising:producing an inhomogeneous oxygen concentration at least in the regionto be doped in the semiconductor body; irradiating the semiconductorbody via one side with electrons for producing defects in the region tobe doped; and carrying out a thermal step at temperatures of between380° C. and 500° C.
 16. The method of claim 15, comprising the durationof the thermal process to be between 20 minutes and 2 hours.
 17. Asemiconductor component having a semiconductor body, having a buriedn-doped semiconductor zone with thermal double donors comprising: thesemiconductor body having an oxygen concentration at least in a regionto be doped, the semiconductor body being irradiated via one side withnondoping particles for producing defects in the region to be doped; andwherein the semiconductor body has been exposed to a thermal process.18. The semiconductor component of claim 17, comprising wherein thedoping concentration in the semiconductor zone at least approximatelyfollows a Gaussian profile, a maximum doping concentration lying between10¹⁴ cm⁻³ and 10¹⁶ cm⁻³.
 19. The semiconductor component of claim 17,comprising wherein the distance between the maximum doping concentrationof the semiconductor zone and a side of the semiconductor body isbetween 10 μm and 30 μm and the half value width is 4 μm to 8 μm. 20.The semiconductor component of claim 17, comprising wherein the distancebetween the maximum doping concentration of the semiconductor zone and aside of the semiconductor body is between 20 μm and 50 μm and the halfvalue width is 6 μm to 12 μm.
 21. The semiconductor component as claimedin claim 17, comprising wherein the distance between the maximum dopingconcentration of the semiconductor zone and a side of the semiconductorbody is between 5 μm and 15 μm and the half value width is 2 μm to 4 μm.22. A system for producing a buried n-doped semiconductor zone in asemiconductor body comprising: means for producing an oxygenconcentration at least in a region to be doped in the semiconductorbody; means for irradiating the semiconductor body via one side withnondoping particles for producing defects in the region to be doped; andmeans for carrying out a thermal process on the semiconductor body.